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1. product pro?le 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information 2N7002T n-channel trenchmos fet rev. 01 17 november 2005 product data sheet n logic level threshold compatible n very fast switching n surface-mounted package n trenchmos technology n logic level translator n high-speed line driver n v ds 60 v n i d 300 ma n r dson 5 w n p tot 0.83 w table 1: pinning pin description simpli?ed outline symbol 1 gate (g) sot23 2 source (s) 3 drain (d) 12 3 s d g mbb076
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 2 of 12 philips semiconductors 2N7002T n-channel trenchmos fet 3. ordering information 4. limiting values table 2: ordering information type number package name description version 2N7002T to-236ab plastic surface mounted package; 3 leads sot23 table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage 25 c t j 150 c - 60 v v dgr drain-gate voltage (dc) 25 c t j 150 c; r gs =20k w -60v v gs gate-source voltage - 30 v v gsm peak gate-source voltage t p 50 m s; pulsed; duty cycle = 25 % - 40 v i d drain current t sp =25 c; v gs = 10 v; see figure 2 and 3 - 300 ma t sp = 100 c; v gs = 10 v; see figure 2 - 190 ma i dm peak drain current t sp =25 c; pulsed; t p 10 m s; see figure 3 - 1.2 a p tot total power dissipation t sp =25 c; see figure 1 - 0.83 w t stg storage temperature - 65 +150 c t j junction temperature - 65 +150 c source-drain diode i s source current t sp =25 c - 300 ma i sm peak source current t sp =25 c; pulsed; t p 10 m s - 1.2 a
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 3 of 12 philips semiconductors 2N7002T n-channel trenchmos fet fig 1. normalized total power dissipation as a function of solder point temperature fig 2. normalized continuous drain current as a function of solder point temperature t sp =25 c; i dm is single pulse fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 03aa17 0 40 80 120 0 50 100 150 200 t sp ( c) p der (%) 03aa25 0 40 80 120 0 50 100 150 200 t sp ( c) i der (%) p der p tot p tot 25 c () ------------------------ 100 % = i der i d i d25 c () -------------------- - 100 % = 03aa03 10 -2 10 -1 1 10 1 10 10 2 v ds (v) i d (a) dc 100 ms 10 ms limit r dson = v ds / i d 1 ms t p = 10 m s 100 m s t sp = 25 c
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 4 of 12 philips semiconductors 2N7002T n-channel trenchmos fet 5. thermal characteristics [1] mounted on a printed-circuit board; minimum footprint; vertical in still air table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point see figure 4 - - 150 k/w r th(j-a) thermal resistance from junction to ambient [1] - - 350 k/w fig 4. transient thermal impedance from junction to solder point as a function of pulse duration 03aa01 10 -1 1 10 10 2 10 3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-sp) (k/w) single pulse 0.2 0.1 0.05 0.02 d = 0.5 t p t p t t p t d =
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 5 of 12 philips semiconductors 2N7002T n-channel trenchmos fet 6. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 m a; v gs =0v t j =25 c 60--v t j = - 55 c 55--v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; see figure 9 and 10 t j =25 c 1 2 2.5 v t j = 150 c 0.6 - - v t j = - 55 c - - 2.75 v i dss drain leakage current v ds =48v; v gs =0v t j =25 c - 0.01 1 m a t j = 150 c --10 m a i gss gate leakage current v gs = 15 v; v ds = 0 v - 10 100 na r dson drain-source on-state resistance v gs = 10 v; i d = 500 ma; see figure 6 and 8 t j =25 c - 2.8 5 w t j = 150 c - - 9.25 w v gs = 4.5 v; i d = 75 ma; see figure 6 and 8 - 3.8 5.3 w dynamic characteristics g fs transfer conductance v gs = 10 v; i d = 200 ma; see figure 11 100 300 - ms c iss input capacitance v gs =0v; v ds = 10 v; f = 1 mhz; see figure 12 - 2540pf c oss output capacitance - 18 30 pf c rss reverse transfer capacitance - 7.5 10 pf t on turn-on time v ds =50v; r l = 250 w ; v gs =10v; r g =50 w ; r gs =50 w - 3 10 ns t off turn-off time - 12 12 ns source-drain diode v sd source-drain voltage i s = 300 ma; v gs = 0 v; see figure 13 - 0.85 1.5 v t rr reverse recovery time i s = 300 ma; di s /dt = - 100 a/ m s; v gs =0v - 30 - ns q r recovered charge - 30 - nc
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 6 of 12 philips semiconductors 2N7002T n-channel trenchmos fet t j =25 ct j =25 c fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of drain current; typical values t j =25 c and 150 c; v ds >i d r dson fig 7. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 8. normalized drain-source on-state resistance factor as a function of junction temperature 03aa04 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 2 v ds (v) i d (a) 3.5 t j = 25 c v gs (v) = 4 4.5 3 10 03aa05 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 i d (a) r dson ( w ) 10 t j = 25 c 4.5 4 3.5 3 v gs (v) = 03aa06 0 0.2 0.4 0.6 0.8 0246 v gs (v) i d (a) t j = 25 c 150 c 03aa28 0 0.6 1.2 1.8 2.4 -60 0 60 120 180 t j ( c) a a r dson r dson 25 c () ------------------------------ =
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 7 of 12 philips semiconductors 2N7002T n-channel trenchmos fet i d = 1 ma; v ds =v gs t j =25 c; v ds =5v fig 9. gate-source threshold voltage as a function of junction temperature fig 10. sub-threshold drain current as a function of gate-source voltage t j =25 c and 150 c; v ds >i d r dson v gs = 0 v; f = 1 mhz fig 11. transfer conductance as a function of drain current; typical values fig 12. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aab101 0 1 2 3 -60 0 60 120 180 t j ( c) v gs(th) (v) min typ max 003aab100 10 -6 10 -5 10 -4 10 -3 0123 v gs (v) i d (a) min typ max 03aa07 0 0.1 0.2 0.3 0.4 0 0.2 0.4 0.6 0.8 i d (a) g fs (s) t j = 25 c 150 c 03aa09 1 10 10 2 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 8 of 12 philips semiconductors 2N7002T n-channel trenchmos fet t j =25 c and 150 c; v gs =0v fig 13. source current as a function of source-drain voltage; typical values 03aa08 0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 v sd (v) i s (a) t j = 25 c 150 c v gs = 0 v
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 9 of 12 philips semiconductors 2N7002T n-channel trenchmos fet 7. package outline fig 14. package outline sot23 unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 99-09-13 04-11-04 iec jedec jeita mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot23
2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 10 of 12 philips semiconductors 2N7002T n-channel trenchmos fet 8. revision history table 6: revision history document id release date data sheet status change notice doc. number supersedes 2N7002T_1 20051117 product data sheet - - -
philips semiconductors 2N7002T n-channel trenchmos fet 2N7002T_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 17 november 2005 11 of 12 9. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 11. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 12. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. trenchmos is a trademark of koninklijke philips electronics n.v. 13. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 17 november 2005 document number: 2N7002T_1 published in the netherlands philips semiconductors 2N7002T n-channel trenchmos fet 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 9 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 10 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information . . . . . . . . . . . . . . . . . . . . 11

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